Processes of Silicon Oxide included are: MOSFET IGBT SCR Diode Devices.

PFC is a leading fabricator in various types of Semiconductor industry components:

• Optical Molds
• Gas Distribution Plates
• Edge Rings
• Heaters		   • Plasma Etch Components
• Vacuum Arms
• Lithography

In most cases, the product is an extremely intricate component produced by using a combination of advanced forming, precision machining, and available grinding equipment.
Property
Thermal
Conductivity
Electrical
Resistivity
Dielectric
Constant
Coefficient
of Thermal
Expansion
Density
General Characteristics
Units
W/mOK
Ohm-cm
RT-1 MHz
10-6 OC
Grams/cm3
AIN Aluminum Nitride
170-190
>1014
8.9
4.6
3.30
High thermal conductivity.
Non toxic. Readily available.

AI2O3 99.5% Aluminum Oxide
(94%-98% also available)

 

36
>1014
9.8
8.2
3.89
Good electrical properties.
Corrosive resistance.
Strong metallization.
BeO 99% Beryllium Oxide
260
>1014
6.7
8.5
2.85
High thermal conductivity.
Good electrical properties.
Strong Metallization.
Si3N4 Silicom Nitride
42
>1014
9.9
3.0
3.29
Thermal shock resistance.
High strength.
Sapphire
40
>1016
9.4
8.4
3.98
Chemically inert.
Hermetic brazing.
High light transmission.
SiC Silicon Carbide
120
>1014
9.0
4.5
3.21
Chemically inert.
Thermal shock resistance.
High thermal conductivity.
ZrO2 Zirconia
2.2
>1013
9.0
10.3
6.04
Impact and wear resistant.
High strength.
Corrosive resistance.
NOTE: The information set for herein is offered for comparison only.
   
 
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